Phison Electronics (8299TT) is a leading provider of NAND controllers and NAND storage solutions. Recently, the company announced a comprehensive range of UFS (Universal Flash Storage) controllers, including the PS8325, PS8327, PS8329, and PS8361. Phison’s new UFS solutions support a broad spectrum of smartphones, from entry-level to flagship models, aiming to deliver peak mobile storage performance and enhance user experience.
As the demand for performance in smartphones continues to rise, many entry-level 5G models are transitioning from eMMC to UFS 2.2. UFS 2.2’s full-duplex mode allows simultaneous read and write operations, significantly improving response times. Coupled with faster interfaces, data transfer speeds can reach up to three times the maximum bandwidth of eMMC, not only catering to smartphone features that require processing large volumes of data, such as high-resolution recording and video playback but also consuming less power to transfer the same amount of data. This aids in improving battery life for smartphones and tablets, meeting the high-performance and low-power requirements of mobile devices.
To address the evolving storage needs of smartphones, Phison has launched the cost-effective UFS 2.2 controller, the PS8327, to meet the growing demand for high-speed mobile storage. Built on a 22nm process, the PS8327 is the smallest UFS 2.2 controller capable of achieving speeds of 1000MB/s even with NAND Flash capacities as low as 64GB. Phison’s comprehensive UFS storage solutions offer numerous advantages, including cost-effectiveness, performance, and low power consumption for mobile devices.
Moreover, the PS8327 incorporates Phison’s in-house sixth-generation LDPC ECC engine, providing more reliable and robust error correction capabilities. It supports existing NAND Flash requirements from various NAND manufacturers and is expected to support next-generation NAND product specifications.
K.S. Pua, CEO of Phison, stated, “With over a decade of R&D experience in the UFS field, Phison has established credible expertise in the development, validation, and technological capabilities of NAND controllers. The PS8327 represents the culmination of Phison’s ten years of UFS R&D efforts and has garnered high acclaim from the industry. Leveraging Phison’s history of being validated by major smartphone chip suppliers for UFS storage solutions, the PS8327 was quickly adopted and deployed by renowned NAND manufacturers. Mobile devices equipped with Phison’s PS8327 UFS storage solutions are expected to be highly competitive in the market.”
In addition to the PS8327, Phison has also launched four other UFS controllers this year: PS8325, PS8327, PS8329, and PS8361. This new product lineup significantly enhances the competitiveness of the existing UFS product line, providing optimal UFS storage solutions across all categories from entry-level to flagship smartphones to meet the needs of all consumers.
PS8327 – Starting Changes with UFS 2.2
PS8327, Phison’s cutting-edge UFS 2.2 solution, enables capacity up to 256GB with low power consumption needs. Quick-firing data signals at 1600 MT/s, the PS8325 also provides GB-scale sequential read performance with excellent random operation capabilities.
PS8327 | |||
Capacity | 64GB | 128GB | 256GB |
Interface | HS-G3x2 UFS 2.2 | ||
Form Factor | UFS | ||
Package | 153 Ball (11.5 mm x 13 mm x 0.8 mm) | ||
NAND Flash | 3D TLC (160+ Layers) | ||
Performance (estimation | |||
Sequential Read | 1000 MB/s | 1000 MB/s | 1000 MB/s |
Sequential Write | 530 MB/s | 950 MB/s | 950 MB/s |
4K Random Read | 60K IOPS | 100K IOPS | 110K IOPS |
4K Random Write | 75K IOPS | 130K IOPS | 160K IOPS |
Power Consumption (estimation) | |||
VCC | 3.3 V | 3.3 V | 3.3 V |
VCCQ | 1.8 V | 1.8 V | 1.8 V |
ICC | 85 mA | 125 mA | 125 mA |
ICCQ | 340 mA | 340 mA | 340 mA |
Environmental Characteristics | |||
Operating Temperature | -25°C ~ 85°C | ||
Storage Temperature | -40°C ~ 85°C | ||
Features | |||
– Host performance booster (HPB) 2.0 – Write booster – Permanent and power-on write protection – Command queuing – Background operation – 2-lanes supported |
Now equipped with Phison’s 6th Gen LDPC engine (4KB codewords), which offers stronger soft-bit decoding than previous generations for improved correction strength, the PS8327 provides comprehensive support for requirements that come in state-of-the-art 3D TLC and QLC NAND flash technology.
UFS 3.1 PS8325: Catering to high-end smartphones, PS8325 features TSMC’s 12nm process and a dual-channel design supporting the latest 1TB NAND from various NAND manufacturers for a total capacity of 1TB. Additionally, PS8325 boasts Phison’s self-developed 4KB LDPC error correction engine, providing advanced and powerful ECC error correction capabilities, significantly enhancing the stability and lifespan of smartphone storages. PS8325 has already secured design wins from many international leading smartphone manufacturers and is expected to start mass production in the first quarter of this year.
PS8325 – Optimizing Experiencing on UFS 3.1
PS8325, Phison’s flagship UFS 3.1 solution, enables capacity up to 1TB while meeting storage needs with space constraints. Thanks to the double-channel NAND interface design, PS8325 is able to fully unleash the performance of UFS 3.1, achieving speeds of over 2000 MB/s. Also equipped with Phison’s 6th Gen LDPC engine (4KB codewords) which offers stronger soft-bit decoding than previous generations for improved correction strength, the PS8325 provides comprehensive support of requirements that come in state-of-the-art 3D TLC and QLC NAND flash technology.
PS8325 | |||
Capacity | 256GB | 512GB | 1TB |
Interface | HS-G4x2 UFS 3.1 | ||
Form Factor | UFS | ||
Package | 153 Ball (11 mm x 13 mm x 0.8 mm) | ||
NAND Flash | 3D TLC (200+ Layers) | ||
Performance | |||
Sequential Read | 2100 MB/s | 2100 MB/s | 2100 MB/s |
Sequential Write | 1800 MB/s | 1800 MB/s | 1800 MB/s |
4K Random Read | 260K IOPS | 300K IOPS | 300K IOPS |
4K Random Write | 300K IOPS | 350K IOPS | 390K IOPS |
Power Consumption | |||
VCC | 2.5 V | 2.5 V | 2.5 V |
VCCQ | 1.2 V | 1.2 V | 1.2 V |
ICC | 185 mA | 315 mA | 490 mA |
ICCQ | 680 mA | 700 mA | 705 mA |
Environmental Characteristics | |||
Operating Temperature | -25°C ~ 85°C | ||
Storage Temperature | -40°C ~ 85°C | ||
Features | |||
-Host performance booster (HPB) 2.0 – Write booster – Permanent and power-on write protection – Command queuing – Background operation – 2-lanes supported |
UFS 3.1 PS8329: Focuses on the mid-range smartphone market. Using a 22nm process, PS8329 is the smallest UFS 3.1 controller in the market and can achieve read and write speeds exceeding 2000MB/s through a single-channel configuration. Additionally, the 4K LDPC ECC error correction engine provides outstanding compatibility and performance with next-generation NAND Flash. PS8329 is planned to begin sampling in June of this year.
UFS 4.0 PS8361: Targets the highest specifications of the flagship smartphone market. Key features include TSMC’s 12nm process and a 4-channel design, read and write speeds exceeding 4000MB/s, twice the performance of UFS 3.1, fulfilling high-speed data transfer requirements of its category, delivering quick app launches, multitasking, etc., significantly reducing wait times for loading applications and providing consumers with the most seamless experience. At the same time, the improved power efficiency of PS8361 will effectively extend the battery life of mobile devices. PS8361 has already been designated for use by NAND manufacturers and is expected to begin shipping in the second half of this year.
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