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Product Details
K4A4G165WE-BCRC 4Gb DDR4 SDRAM Samsung electronic component supplier
High-performing memory empowers faster, powerful solutions.Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.
• An Evolution in Performance
• Less Energy, Greater Efficiency
• Improved Reliability
K4A4G165WE-BCRC
Density: 4Gb
Org.: 256M x 16
Speed: 2400 Mbps
Voltage: 1.2 V
Temp.: 0 ~ 85 °C
Package: 96FBGA
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Part No | K4A4G165WE-BCRC |
DRAM Type | DDR4 SDRAM |
Chip Density (bit) | 4G |
Organization | 256Mx16 |
Number of Internal Banks | 8 |
Number of Words per Bank | 32M |
Number of Bits/Word (bit) | 16 |
Data Bus Width (bit) | 16 |
Maximum Clock Rate (MHz) | 2400 |
Maximum Access Time (ns) | 0.175 |
Address Bus Width (bit) | 20 |
Minimum Operating Supply Voltage (V) | 1.14 |
Typical Operating Supply Voltage (V) | 1.2 |
Maximum Operating Supply Voltage (V) | 1.26 |
Operating Current (mA) | 129 |
Minimum Operating Temperature (°C) | 0 |
Maximum Operating Temperature (°C) | 95 |
Supplier Temperature Grade | Commercial |
Number of I/O Lines (bit) | 16 |
Mounting | Surface Mount |
Package Width | 7.5 |
Package Length | 13.3 |
PCB changed | 96 |
Standard Package Name | BGA |
Supplier Package | FBGA |
Pin Count | 96 |
Lead Shape | Ball |