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Product Details
K4A8G165WC-BCTD 8Gb DRAM DDR4 SDRAM Memory stock
K4A8G165WC-BCTD by Samsung Electronics DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA
The 8Gb DDR4 SDRAM K4A8G165WC-BCTD C-die is organized as a 64Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling).
All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) VDDQ and 2.5V (2.375V~2.75V) VPP. The 8Gb DDR4 C-die device is available in 96ball FBGAs(x16).
K4A8G165WC-BCTD
• JEDEC standard 1.2V (1.14V~1.26V)
• VDDQ = 1.2V (1.14V~1.26V)
• VPP = 2.5V (2.375V~2.75V)
• 800 MHz fCK for 1600Mb/sec/pin, 933 MHz fCK for 1866Mb/sec/pin,
1067MHz fCK for 2133Mb/sec/pin, 1200MHz fCK for 2400Mb/sec/pin,
1333MHz fCK for 2666Mb/sec/pin
• 8 Banks (2 Bank Groups)
• Programmable CAS Latency (posted CAS):
10,11,12,13,14,15,16,17,18,19,20
• Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12
(DDR4-1866),11,14 (DDR4-2133),12,16 (DDR4-2400) and 14,18 (DDR4-
2666)
• 8-bit pre-fetch
• Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal (self) calibration: Internal self calibration through ZQ pin
(RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C <
TCASE < 95 °C
• Connectivity Test Mode (TEN) is Supported
• Asynchronous Reset
• Package: 96 balls FBGA – x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
• CRC (Cyclic Redundancy Check) for Read/Write data security
• Command address parity check
• DBI (Data Bus Inversion)
• Gear down mode
• POD (Pseudo Open Drain) interface for data input/output
• Internal VREF for data inputs
• External VPP for DRAM Activating Power
• PPR and sPPR is supported
| Type | K4A8G165WC-BCTD |
| DRAM Type | DDR4 SDRAM |
| Chip Density (bit) | 8G |
| Organization | 512Mx16 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 64M |
| Number of Bits/Word (bit) | 16 |
| Data Bus Width (bit) | 16 |
| Maximum Clock Rate (MHz) | 2666 |
| Maximum Access Time (ns) | 0.17 |
| Address Bus Width (bit) | 20 |
| Interface Type | POD |
| Minimum Operating Supply Voltage (V) | 1.14 |
| Typical Operating Supply Voltage (V) | 1.2 |
| Maximum Operating Supply Voltage (V) | 1.26 |
| Operating Current (mA) | 166 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Temperature (°C) | 95 |
| Number of I/O Lines (bit) | 16 |
| Mounting | Surface Mount |
| Package Width | 7.5 |
| Package Length | 13.3 |
| PCB changed | 96 |
| Standard Package Name | BGA |
| Supplier Package | FBGA |
| Pin Count | 96 |
| Lead Shape | Ball |
