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Product Details
GENERAL DESCRIPTIONS
FEATURES
PRODUCT ATTRIBUTES
GENERAL DESCRIPTIONS
Part number | RS1G32LX4D4BNR-53BT |
Capacity | 32Gb |
Bit width | x 32 |
Rate | 3733Mbps |
Working voltage | 1.8 / 1.1 / 0.6V |
Working temperature | -25~85℃ |
Packaging | FBGA 200 |
FEATURES
- Ultra-low-voltage core and I/O power supplies
– VDD1 = 1.70-1.95V; 1.80V nominal
– VDD2 = 1.06-1.17V; 1.10V nominal
– VDDQ = 0.57-0.65V; 0.60V nominal Or VDDQ = 1.06-1.17V; 1.10V nominal
- Frequency range
– 1866-10 MHz (data rate range per pin:3733-20Mbp/s)
- 16n prefetch DDR architecture
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD / ADR entry
- Bidirectional / differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL / WL)
- Programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- Up to 8.53 GB / s per die x16 channel
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Selectable output drive strength (DS)
- Clock-stop capability
- RoHS-compliant, “green” packaging
- VDD1/VDD2/VDDQ: 1.80V/1.10V/0.60V or 1.10V
- Array configuration
– 1 Gig x 32 (2 channels x 16 I/O)
– 512M16 x 4 die in package
- FBGA “green” package
– 200-ball FBGA (10mm x15mm x1.07mm Max)
- Speed grade,cycle time
– 535ps@ RL = 32/36
- Operating temperature range
– -25°C to + 85°C
PRODUCT ATTRIBUTES
tablets, smart TVs, mobile phones, educational electronics, smart wearables, car, box.