RS256M16ZADD-75DT Rayson DDR4 SDRAM Memory Authorized Rayson Electronic Parts Wholesaler

– Model: RS256M16ZADD-75DT
– Type: DDR4 SDRAM
– Configuration: 32 Meg x 16 x 8 Banks
– Features:
– Supply Voltage (VDD/VDDQ): 1.2V ±60mV
– Programming Voltage (VPP): 2.5V, –125mV/+250mV
– On-die, internal, adjustable VREFDQ generation
– 1.2V pseudo open-drain I/O
– Operating Temperature: 0°C to 95°C
– 16 internal banks (x4, x8): 4 groups of 4 banks each
– 8 internal banks (x16): 2 groups of 4 banks each
– 8n-bit prefetch architecture
– Programmable data strobe preambles
– Data strobe preamble training
– Command/Address latency (CAL)
– Multipurpose register READ and WRITE capability
– Write and read leveling
– Self refresh mode
– Low-power auto self refresh (LPASR)
– Temperature controlled refresh (TCR)
– Fine granularity refresh
– Self refresh abort
– Maximum power saving
– Output driver calibration
– Nominal, park, and dynamic on-die termination (ODT)
– Data bus inversion (DBI) for data bus
– Command/Address (CA) parity
– Databus write cyclic redundancy check (CRC)
– Per-DRAM addressability
– Connectivity test (x16)
– Post package repair (PPR) and soft post package repair (sPPR) modes
– JEDEC JESD-79-4 compliant
– Package: FBGA-96(7.5×13.5)
– Density: 4 Gigabyte
– Voltage/Refresh: 1.5V/8k refresh
– Timing:
– 0.750ns @ CL = 18 (DDR4-2666)
– 0.833ns @ CL = 16 (DDR4-2400)
– 0.937ns @ CL = 15 (DDR4-2133)
– Operating Temperature: Commercial (0° -95°C)
– Compatibility: Compatible with platforms such as MTK, Spreadtrum, Rockchip, and Amlogic.

This DDR4 SDRAM is known for its high speed of up to 2667Mbps, lower power consumption, and higher energy efficiency, providing long-term stable supply assurance. It is commonly used in applications such as tablets, automotive, set-top boxes, and educational electronics.